?2000 fairchild semiconductor international august 2000 rev. a, august 2000 fqb12p10 / FQI12P10 qfet qfet qfet qfet tm fqb12p10 / FQI12P10 100v p-channel mosfet general description these p-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for low voltage applications such as audio amplifier, high efficiency switching dc/dc converters, and dc motor control. features ? -11.5a, -100v, r ds(on) = 0.29 ? @v gs = -10 v ? low gate charge ( typical 21 nc) ? low crss ( typical 65 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? 175 c maximum junction temperature rating ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! s d g absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics symbol parameter fqb12p10 / FQI12P10 units v dss drain-source voltage -100 v i d drain current - continuous (t c = 25c) -11.5 a - continuous (t c = 100c) -8.1 a i dm drain current - pulsed (note 1) -46 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 370 mj i ar avalanche current (note 1) -11.5 a e ar repetitive avalanche energy (note 1) 7.5 mj dv/dt peak diode recovery dv/dt (note 3) -6.0 v/ns p d power dissipation (t a = 25c) * 3.75 w power dissipation (t c = 25c) 75 w - derate above 25c 0.5 w/c t j , t stg operating and storage temperature range -55 to +175 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 2.0 c / w r ja thermal resistance, junction-to-ambient * -- 40 c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w * when mounted on the minimum pad size recommended (pcb mount) d 2 -pak fqb series i 2 -pak fqi series g s d g s d
rev. a, august 2000 fqb12p10 / FQI12P10 (note 4) (note 4, 5) (note 4, 5) (note 4) ?2000 fairchild semiconductor international electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 4.2mh, i as = -11.5a, v dd = -25v, r g = 25 ?, starting t j = 25c 3. i sd -11.5a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = -250 a -100 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = -250 a, referenced to 25c -- -0.1 -- v/c i dss zero gate voltage drain current v ds = -100 v, v gs = 0 v -- -- -1 a v ds = -80 v, t c = 150c -- -- -10 a i gssf gate-body leakage current, forward v gs = -25 v, v ds = 0 v -- -- -100 na i gssr gate-body leakage current, reverse v gs = 25 v, v ds = 0 v -- -- 100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = -250 a -2.0 -- -4.0 v r ds(on) static drain-source on-resistance v gs = -10 v, i d = -5.75 a -- 0.24 0.29 ? g fs forward transconductance v ds = -40 v, i d = -5.75 a -- 6.7 -- s dynamic characteristics c iss input capacitance v ds = -25 v, v gs = 0 v, f = 1.0 mhz -- 620 800 pf c oss output capacitance -- 220 290 pf c rss reverse transfer capacitance -- 65 85 pf switching characteristics t d(on) turn-on delay time v dd = -50 v, i d = -11.5 a, r g = 25 ? -- 15 40 ns t r turn-on rise time -- 160 330 ns t d(off) turn-off delay time -- 35 80 ns t f turn-off fall time -- 60 130 ns q g total gate charge v ds = -80 v, i d = -11.5 a, v gs = -10 v -- 21 27 nc q gs gate-source charge -- 4.6 -- nc q gd gate-drain charge -- 11.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- -11.5 a i sm maximum pulsed drain-source diode forward current -- -- -46 a v sd drain-source diode forward voltage v gs = 0 v, i s = -11.5 a -- -- -4.0 v t rr reverse recovery time v gs = 0 v, i s = -11.5 a, di f / dt = 100 a/ s -- 110 -- ns q rr reverse recovery charge -- 0.47 -- c
fqb12p10 / FQI12P10 rev. a, august 2000 ?2000 fairchild semiconductor international 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 -1 10 0 10 1 175 notes : 1. v gs = 0v 2. 250 s pulse test 25 -i dr , reverse drain current [a] -v sd , source-drain voltage [v] 0 10203040 0.0 0.2 0.4 0.6 0.8 note : t j = 25 v gs = - 20v v gs = - 10v r ds(on) [ ? ], drain-source on-resistance -i d , drain current [a] 246810 10 -1 10 0 10 1 175 25 -55 notes : 1. v ds = -40v 2. 250 s pulse test -i d , drain current [a] -v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 v gs top : -15.0 v -10.0 v -8.0 v -7.0 v -6.5 v -5.5 v -5.0 v bottom : -4.5 v notes : 1. 250 s pulse test 2. t c = 25 -i d , drain current [a] -v ds , drain-source voltage [v] 0 4 8 12 16 20 24 0 2 4 6 8 10 12 v ds = -50v v ds = -20v v ds = -80v note : i d = -11.5 a -v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 1400 1600 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] -v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics
?2000 fairchild semiconductor international fqb12p10 / FQI12P10 rev. a, august 2000 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n ote s : 1. z jc (t) = 2.0 /w m ax. 2. d u ty f actor, d =t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , s q u are w ave p u lse d ura tion [sec] 25 50 75 100 125 150 175 0 2 4 6 8 10 12 -i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse -i d , drain current [a] -v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 note : 1. v gs = -10 v 2. i d = -5.75 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = -250 a -bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2
fqb12p10 / FQI12P10 rev. a, august 2000 ?2000 fairchild semiconductor international charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs -10v q g q gs q gd -3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs v ds v gs 10% 90% t d(on) t r t on t off t d(off) t f v dd -10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time -10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
?2000 fairchild semiconductor international fqb12p10 / FQI12P10 rev. a, august 2000 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g compliment of dut (n-channel) v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fqb12p10 / FQI12P10 rev. a, august 2000 ?2000 fairchild semiconductor international package dimensions 10.00 0.20 10.00 0.20 (8.00) (4.40) 1.27 0.10 0.80 0.10 0.80 0.10 (2xr0.45) 9.90 0.20 4.50 0.20 0.10 0.15 2.40 0.20 2.54 0.30 15.30 0.30 9.20 0.20 4.90 0.20 1.40 0.20 2.00 0.10 (0.75) (1.75) (7.20) 0 ~3 1.20 0.20 9.20 0.20 15.30 0.30 4.90 0.20 (0.40) 2.54 typ 2.54 typ 1.30 +0.10 ?.05 0.50 +0.10 ?.05 d 2 pak
?2000 fairchild semiconductor international fqb12p10 / FQI12P10 rev. a, august 2000 package dimensions (continued) 9.90 0.20 2.40 0.20 4.50 0.20 1.27 0.10 1.47 0.10 (45 ) 0.80 0.10 10.00 0.20 2.54 typ 2.54 typ 13.08 0.20 9.20 0.20 1.20 0.20 10.08 0.20 max13.40 max 3.00 (0.40) (1.46) (0.94) 1.30 +0.10 0.05 0.50 +0.10 0.05 i 2 pak
?2000 fairchild semiconductor international trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. acex? bottomless? coolfet? crossvolt? dome? e 2 cmos? ensigna? fact? fact quiet series? fast ? fastr? globaloptoisolator? gto? hisec? isoplanar? microwire? optologic? optoplanar? pop? powertrench ? qfet? qs? qt optoelectronics? quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. f1 vcx?
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